Transistor element query
Part Number:HYG018N10NS1P
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 â]300 W
[Case temperature (Tc) = 25 â]300 W
Drain current (ID):
[Case temperature (Tc) = 25 â]280 A
[Case temperature (Tc) = 25 â]280 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.0021 Ω
Package:TO-220
More N-Channel FETDHD1710IRFSZ44A06N03IRF100B201STH10NC60FIFDP36528N60GIRFF422FQP6N80CIRFD1Z02SK832SK2629MTP4N20KHB9D5N20F1FBM120N80A