Transistor element query
Part Number:NCE55H12
Part Type:N-Channel FET
Power Dissipation (PD):200 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]120 A
[Case temperature (Tc) = 25 ℃]120 A
Drain-source voltage (VDSS):55 V
Drain-source on resistance (RDS(on)):0.0055 Ω
Package:TO-220
More N-Channel FET11N80-CCS150N03NCE40H12IMTP4N40SGF180N60W3LNC7N607N65LFQP12N60CDH130N03IRFBE20SVF8N60AIRFAG30NTMFS4C09NFDP032N08AO4406