常用二极管、三极管、场效应管参数资料
发布时间 2008-11-28
表7 3AD低频小功率锗管及其他同类型锗管(PNP型)
部标新型号
|
旧型号
|
极限参数
|
直流参数
|
交流参数
|
||||||
PCM
/W
|
ICM
/mA
|
BUCBO
/V
|
BUCEO
/V
|
ICBO
/μA
|
ICEO
/mA
|
hFE
/β
|
UCES
/V
|
fT
/kHZ
|
||
3AD50A
|
3AD6A
|
10
|
3
|
50
|
18
|
0.3
|
2.5
|
20~140
|
0.6
|
4
|
3AD50B
|
3AD6B
|
60
|
24
|
0.8
|
||||||
3AD50C
|
3AD6C
|
70
|
30
|
0.8
|
||||||
3AD52A
3AD52B
3AD52C
|
3AD1,2,3
3AD4,5
|
10
|
2
|
50
60
70
|
18
24
30
|
0.3
|
2.5
|
20~140
|
0.35
0.5
0.5
|
4
|
3AD56A
3AD56B
3AD56C
|
3AD18A
3AD18B
3AD18C,D,E
|
50
|
15
|
30
45
76
|
60
80
100
|
0.8
|
15
|
20~140
|
0.7
1
1
|
4
|
3AD57A
3AD57B
3AD57C
|
3AD725A
3AD725B
3AD57C
|
100
|
30
|
30
45
60
|
60
80
100
|
1.2
|
20
|
20~140
|
1.2
|
3
|
表8 3DD低频大功率硅管及其他同类型硅管(NPN型)
部标新型号
|
旧型号
|
极限参数
|
直流参数
|
交流参数
|
|||||
PCM
/W
|
ICM
/mA
|
BUCBO
/V
|
BUCEO
/V
|
ICBO
/mA
|
V CES
/V
|
hFE
/β
|
fT
/MHZ
|
||
3DD59A
|
3DD5A
|
25
|
5
|
≥30
|
≥3
|
≤1.5
|
≤1.2
|
≥10
|
|
3DD59B
|
3DD5B
DD11A
|
≥50
|
|||||||
3DD59C
|
3DD5C
|
≥80
|
|||||||
3DD59D
|
3DD5D
DD11B
|
≥110
|
|||||||
3DD59E
|
3DD5E
DD11C
|
≥150
|
|||||||
测试条件
|
TC=
75℃
|
|
IC=5mA
|
IE=10mA
|
UCE=20V
|
IC=1.25mA
IB=0.25mA
|
UCE=5V
IC=1.25mA
|
|
|
3DD101A
|
3DD12A
|
50
|
5
|
≥150
|
≥100
|
≤2
|
≤0.8
|
≥20
|
≥1
|
3DD101B
|
3DD15C
|
≥200
|
≥150
|
≤0.8
|
|||||
3DD101C
|
3DD03C
|
≥250
|
≥200
|
≤1.5
|
|||||
3DD101D
|
3DD15D
|
≥300
|
≥250
|
≤1.5
|
|||||
3DD101E
|
3DDE~G
|
≥350
|
≥300
|
≤1.5
|
|||||
测试条件
|
TC=
75℃
|
|
IC=5mA
|
IE=5mA
|
UCE=50V
|
IC=2.5A
IB=0.25A
|
UCE=5V
IC=2A
|
UCE=12V
IC=0.5A
|
表9 3DG高频小功率硅管及其他同类型硅管(NPN型)
旧型号
|
部标新型号
|
极限参数
|
直流参数
|
交流参数
|
|||||
PCM
/W
|
ICM
/mA
|
BUCBO
/V
|
BUCEO
/V
|
ICBO
/μA
|
ICEO
/μA
|
hFE
/β
|
fT
/MHZ
|
||
3DG6A
|
3DG100M
|
100
|
20
|
20
|
15
|
≤0.01
|
≤0.01
|
25~270
|
≥150
|
3DG6A
|
3DG100A
|
30
|
20
|
≥30
|
≥150
|
||||
3DG6B
|
3DG100B
|
40
|
30
|
≥30
|
≥150
|
||||
3DG6C
|
3DG100C
|
30
|
20
|
≥30
|
≥300
|
||||
3DG6D
|
3DG100D
|
40
|
30
|
≥30
|
≥300
|
||||
|
3DG103M
|
100
|
20
|
≥15
|
≥12
|
≤0.1
|
≤0.1
|
25~270
|
≥500
|
3DG11A,B
|
3DG103A
|
≥20
|
≥15
|
≥30
|
≥500
|
||||
3DG104B
|
3DG103B
|
≥40
|
≥30
|
≥30
|
≥500
|
||||
3DG104C
|
3DG103C
|
≥20
|
≥15
|
≥30
|
≥700
|
||||
3DG104D
|
3DG103D
|
≥40
|
≥30
|
≥30
|
≥700
|
||||
测试条件
|
|
|
Ic=
100μA
|
Ic=
100μA
|
UCB=10V
|
UCE=10V
|
UCE=10V
Ic=30mA
|
UCE=10V
IE=50mA
fT=100MHZ
|
|
|
3DG121M
|
500
|
100
|
≥30
|
≥20
|
≤0.1
|
≤0.2
|
25~270
|
≥150
|
3DG5A
|
3DG121A
|
≥40
|
≥30
|
≥30
|
≥150
|
||||
3DG7C
|
3DG121B
|
≥60
|
≥45
|
≥30
|
≥150
|
||||
3DG5C~F
|
3DG121C
|
≥40
|
≥30
|
≥30
|
≥300
|
||||
3DG7B,D
|
3DG121D
|
≥60
|
≥45
|
≥30
|
≥300
|
||||
测试条件
|
|
|
Ic=
100μA
|
Ic=
100μA
|
UCB=10V
|
UCE=10V
|
UCE=10V
Ic=30mA
|
UCE=10V
IE=50mA
fT=100MHZ
|
|
|
3DG130M
|
700
|
300
|
≥30
|
≥20
|
≤1
|
≤5
|
25~270
|
≥150
|
|
3DG130A
|
≥40
|
≥30
|
≤0.5
|
≤1
|
≥30
|
≥150
|
||
|
3DG130B
|
≥60
|
≥45
|
≤0.5
|
≤1
|
≥30
|
≥150
|
||
|
3DG130C
|
≥40
|
≥30
|
≤0.5
|
≤1
|
≥30
|
≥300
|
||
|
3DG130D
|
≥60
|
≥45
|
≤0.5
|
≤1
|
≥30
|
≥300
|
||
测试条件
|
|
|
Ic=
100μA
|
Ic=
100μA
|
UCB=10V
|
UCE=10V
|
UCE=10V
Ic=50mA
|
UCE=10V
IE=3mA
fT=100MHZ
|
表10 3AG高频小功率锗管及其他同类型锗管
参数
型号
|
PCM/mW
|
ICM/mA
|
U(BR)CEO/V
|
ICEO/μA
|
hFE/β
|
fT/MHZ
|
3AG1
|
50
|
10
|
-10
|
≤7
|
20~230
|
≥20
|
3AG2
|
50
|
10
|
-10
|
30~220
|
≥40
|
|
3AG3
|
50
|
10
|
-10
|
30~220
|
≥60
|
|
3AG4
|
50
|
10
|
-10
|
30~220
|
≥80
|
表11 3DK硅开关管及其他同类型硅管(NPN型)
型号
|
直流参数
|
交流
参数
|
开关参数
|
极限参数
|
|||||||
ICEO
/μA
|
ICEO
/μA
|
hFE
/β
|
fT
/MHZ
|
tON
/ns
|
tOff
/ns
|
BUCBO
/V
|
BUCEO
/V
|
PCM
/W
|
I CM
/ mA
|
Tfm
/℃
|
|
3DK1A
|
≤0.1
|
0.5
|
30~200
|
≥200
|
≤20
|
≤30
|
≥30
|
≥20
|
100
|
30
|
175
|
3DK1B
|
≤0.1
|
30~200
|
≤40
|
≤60
|
≥30
|
≥20
|
|||||
3DK1C
|
≤0.1
|
30~200
|
≤60
|
≤80
|
≥30
|
≥20
|
|||||
3DK1D
|
≤0.5
|
≥10
|
≤20
|
≤30
|
≥30
|
≥15
|
|||||
3DK1E
|
≤0.5
|
≥10
|
≤40
|
≤60
|
≥30
|
≥15
|
|||||
3DK1F
|
≤0.5
|
≥10
|
≤60
|
≤80
|
≥30
|
≥15
|
|||||
测试条件
|
UCB=
10V
|
UCE=
10V
|
UC=1V
IC=10 mA
|
fT=30MHZ
UCE=1V
IC=10 mA
|
|
|
IC
=100
μA
|
IC
=200
μA
|
IE
=100
μA
|
|
|
3DK7
|
≤1
|
≤1
|
20~150
|
≥150
|
≤50
|
≤80
|
≥25
|
≥15
|
≥4
|
30
|
150
|
3DK7A
|
≤0.1
|
≤0.1
|
20~200
|
≥120
|
65
|
<180
|
>5
|
50
|
175
|
||
3DK7B
|
≤0.1
|
≤0.1
|
≥120
|
65
|
<180
|
||||||
3DK7C
|
≤0.1
|
≤0.1
|
≥120
|
45
|
<130
|
||||||
3DK7D
|
≤0.1
|
≤0.1
|
≥120
|
45
|
90
|
||||||
3DK7E
|
≤0.1
|
≤0.1
|
≥120
|
45
|
60
|
||||||
3DK7F
|
≤0.1
|
≤0.1
|
≥120
|
45
|
40
|
||||||
测试条件
|
UCB=
10V
|
UCE=
10V
|
UCE=1V
IC=10 mA
|
IC=10 mA
IB1=1 mA
IB2=2 mA
|
IC=
10 mA
IB1=IB2
=10 mA
|
IC=
10μA
|
IC=
10μA
|
IE=
10
μA
|
|
|
表12 场效应管
参数
|
符号
|
单位
|
型号
|
|||||
3DO1
|
3DO4
|
3DJ2
|
3DJ8F
|
3DO6
|
3CO1
|
|||
饱和漏极电流
|
IDSS
|
μA
|
0.3~10
|
0.5×103~15×103
|
0.3~10
|
15
|
2.5~5
|
<1000nA
|
栅源夹断电压
|
UGS(Off)
|
V
|
<|-9|
|
<|-9|
|
<|-9|
|
<|-9|
|
2~2.5
|
|-2|~|-8|
|
栅源绝缘电阻
|
RGS
|
Ω
|
≥109
|
≥109
|
≥107
|
107
|
≥109
|
|
共源小信号低频跨导
|
gm
|
μA/V
|
≥1000
|
≥2000
|
≥2000
|
6000
|
>2000
|
≥10
|
高频振荡频率
|
fT
|
MHZ
|
≥90
|
≥300
|
≥300
|
90
|
|
>500
|
最高漏源电压
|
UDS(BR)
|
V
|
20
|
20
|
>20
|
20
|
20
|
15
|
最高栅源电压
|
UGS(BR)
|
V
|
40
|
≥20
|
>20
|
20
|
20
|
20
|
最大耗散功率
|
UDSM
|
mW
|
100
|
1000
|
100
|
100
|
100
|
100
|
备注
|
|
|
N沟道耗尽型MOS管
|
|
|
高互导管
|
N沟道增强型开关管
|
P沟道增强型MOS管
|
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