晶体管元件查询
型号:P20N60SD2
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】150 W
【管壳温度(Tc)=25 ℃】150 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】20 A
【管壳温度(Tc)=25 ℃】20 A
漏极和源极电压(VDSS):600 V
漏极和源极通态电阻(RDS(on)):0.19 Ω
封装:TO-263
更多N沟道场效应管IRF630B23N50EFLM5964-4C/DIRFP264IRFSL4615PbFLNG4N652SK1616MDF12N50IRFK4HC50IRF233LSG65R1K5HTLSGC085R041W3IRC644IRF362SVF5N60A