Transistor element query
Part Number:2N5886
Part Type:NPN Transistor
Collector power dissipation (PC):200 W
Collector current (IC):25 A
Collector maximum allowable current (ICM):50 A
Collector-base voltage (VCBO):80 V
Collector-emitter voltage (VCEO):80 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):1000 μA
Emitter cut-off current (IEBO):1000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 15 A]1 V
[Collector current (Ic) = 15 A]1 V
Transition frequency (fT):4 MHz
DC current gain (hFE):20~100
chip material:Silicon
Remark:Complementary to 2N5884
Package:TO-3
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