Transistor element query
Part Number:3DD100E
Part Type:NPN Transistor
Power Dissipation (PD):
[Case temperature (Tc) = 75 ℃]20 W
[Case temperature (Tc) = 75 ℃]20 W
Collector current (IC):
[Ambient temperature (Ta) = 25 ℃]1.5 A
[Ambient temperature (Ta) = 25 ℃]1.5 A
Collector-base voltage (VCBO):350 V
Collector-emitter voltage (VCEO):300 V
Emitter-base voltage (VEBO):4 V
Collector cut-off current (ICBO):500 μA
Collector-emitter leakage current (ICEO):200 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 1 A]1.5 V
[Collector current (Ic) = 1 A]1.5 V
DC current gain (hFE):≥40
Package:TO-66
More NPN Transistor3DD100CCS130032SD10512SD14482SD16842SD612K2SC2238A1ST0232SC46022SD9852SD1563A2SD14512SD11642SC48143DD4E