Transistor element query
Part Number:3DD13001
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):1.2 W
Collector maximum allowable current (ICM):0.2 A
Collector-base voltage (VCBO):600 V
Collector-emitter voltage (VCEO):400 V
Emitter-base voltage (VEBO):7 V
Collector cut-off current (ICBO):100 μA
Collector-emitter leakage current (ICEO):200 μA
Transition frequency (fT):8 MHz
DC current gain (hFE):5~70
chip material:Silicon
Package:TO-92