Transistor element query
Part Number:3DD13E
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):50 W
Collector maximum allowable current (ICM):3 A
Collector-base breakdown voltage (BVCBO):1200 V
Collector-emitter breakdown voltage (BVCEO):600 V
Collector cut-off current (ICBO):100 μA
Transition frequency (fT):1 MHz
DC current gain (hFE):≥20
chip material:Silicon
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