Transistor element query
Part Number:3DD6E
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):50 W
Collector maximum allowable current (ICM):7.5 A
Collector-emitter breakdown voltage (BVCEO):110 V
Emitter-base breakdown voltage (BVEBO):3 V
Collector cut-off current (ICBO):2000 μA
DC current gain (hFE):≥10
chip material:Silicon
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