Transistor element query
Part Number:3DD50E
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):1 W
Collector maximum allowable current (ICM):1 A
Collector-emitter breakdown voltage (BVCEO):150 V
Emitter-base breakdown voltage (BVEBO):3 V
Collector-emitter leakage current (ICEO):400 μA
DC current gain (hFE):≥10
chip material:Silicon
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