Transistor element query
Part Number:3DG110M
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Collector cut-off current (ICBO):0.5 μA
Collector-emitter leakage current (ICEO):0.5 μA
Transition frequency (fT):150 MHz
DC current gain (hFE):25～270
chip material:Silicon
More NPN TransistorBC184CP3DG161M3DG9D3DG161L3DX4AAD8123DG110D2SC40383DG4B3DG8D3DG44EBC109CP3DG414BCP1482N3566