Transistor element query
Part Number:3DG4B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Collector cut-off current (ICBO):0.1 μA
Collector-emitter leakage current (ICEO):0.1 μA
Transition frequency (fT):150 MHz
DC current gain (hFE):≥30
chip material:Silicon
More NPN TransistorBC414BP3DG110M3DG111D3DG81A3DK103A3DG4D3DX1023DG161A3DG111C3DG5E3BX85CBCP148BCP1083DX4BBCP107