Transistor element query
Part Number:3DG111M
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):20 V
Collector-emitter breakdown voltage (BVCEO):15 V
Collector cut-off current (ICBO):0.5 μA
Collector-emitter leakage current (ICEO):0.5 μA
Transition frequency (fT):150 MHz
DC current gain (hFE):25～270
chip material:Silicon
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