Transistor element query
Part Number:3DG200B
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.1 W
Collector maximum allowable current (ICM):0.02 A
Collector-base breakdown voltage (BVCBO):25 V
Collector-emitter breakdown voltage (BVCEO):25 V
Collector cut-off current (ICBO):0.05 μA
Collector-emitter leakage current (ICEO):0.1 μA
Transition frequency (fT):100 MHz
DC current gain (hFE):25～270
chip material:Silicon
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