Transistor element query
Part Number:3DK103A
Part Type:NPN Transistor
Collector Maximum Dissipated Power (PCM):0.3 W
Collector maximum allowable current (ICM):0.05 A
Collector-base breakdown voltage (BVCBO):60 V
Collector-emitter breakdown voltage (BVCEO):45 V
Emitter-base breakdown voltage (BVEBO):4 V
Collector-emitter leakage current (ICEO):0.1 μA
Emitter cut-off current (IEBO):0.1 μA
Transition frequency (fT):200 MHz
DC current gain (hFE):25~180
chip material:Silicon
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