Transistor element query
Part Number:4N65G
Part Type:N-Channel FET
Power Dissipation (PD):106 W
Drain current (ID):
[Ambient temperature (Ta) = 25 ℃]4 A
[Ambient temperature (Ta) = 25 ℃]4 A
Drain-source voltage (VDSS):650 V
Drain-source on resistance (RDS(on)):2.6 Ω
Package:TO-263
More N-Channel FETFQPF20N60IRLD120NCE4060KSSM09N90GW2SK1942-01FQD6N60CSTP80NF70NE345L-10B7N60CS1N60C1HIXTM5N100IRFF120IRLML2402PbF2SK1010IRFAG42