Transistor element query
Part Number:H7N1004DL
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 â]30 W
[Case temperature (Tc) = 25 â]30 W
Drain current (ID):
[Ambient temperature (Ta) = 25 â]25 A
[Ambient temperature (Ta) = 25 â]25 A
Drain-source voltage (VDSS):100 V
Drain-source on resistance (RDS(on)):0.035 Ω
Package:IPAK
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