Transistor element query
Part Number:MJD112
Part Type:NPN Darlington Transistor
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]20 W
[Case temperature (Tc) = 25 ℃]20 W
Collector current (IC):2 A
Collector-base voltage (VCBO):100 V
Collector-emitter voltage (VCEO):100 V
Emitter-base voltage (VEBO):5 V
Collector cut-off current (ICBO):20 μA
Emitter cut-off current (IEBO):2000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 2 A]2 V
[Collector current (Ic) = 2 A]2 V
Transition frequency (fT):25 MHz
DC current gain (hFE):1000~12000
Remark:Complementary to MJD117
Package:DPAK/IPAK
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