Transistor element query
Part Number:MJD122T4G
Part Type:Damped NPN Darlington Transistor
Collector power dissipation (PC):
[Collector temperature (Tc) = 25 ℃]20 W
[Collector temperature (Tc) = 25 ℃]20 W
Collector current (IC):8 A
Collector-base voltage (VCBO):100 V
Collector-emitter voltage (VCEO):100 V
Emitter-base voltage (VEBO):5 V
Collector-emitter leakage current (ICEO):10 μA
Emitter cut-off current (IEBO):2000 μA
Collector-emitter saturation voltage (VCE(sat)):
[Collector current (Ic) = 8 A]4 V
[Collector current (Ic) = 8 A]4 V
Transition frequency (fT):4 MHz
DC current gain (hFE):1000~12000
Remark:Complementary to MJD127T4G
Package:DPAK
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