Transistor element query
Part Number:NCE55H11
Part Type:N-Channel FET
Power Dissipation (PD):200 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]110 A
[Case temperature (Tc) = 25 ℃]110 A
Drain-source voltage (VDSS):55 V
Drain-source on resistance (RDS(on)):0.0075 Ω
Package:TO-220
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