Transistor element query
Part Number:NVB5860NT4G
Part Type:N-Channel FET
Power Dissipation (PD):283 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]220 A
[Case temperature (Tc) = 25 ℃]220 A
Drain-source voltage (VDSS):60 V
Drain-source on resistance (RDS(on)):0.003 Ω
Package:D2PAK
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