Transistor element query
Part Number:OSG60R200FSZF
Part Type:N-Channel FET
Power Dissipation (PD):34 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]20 A
[Case temperature (Tc) = 25 ℃]20 A
Drain-source voltage (VDSS):600 V
Drain-source on resistance (RDS(on)):0.2 Ω
Package:TO-220F
More N-Channel FETTSP12N60MIRFJ140IRF244BUZ942SK2862IXFH6N100RU6199RLSE65R180GFLSH65R2K5GTSUB85N03-07P2SK11182SK214IPI200N25N3G(200N25N)IXFK94N50P2AOTF9N70