Transistor element query
Voltage V　 Current A
Part Number:SiHG80N60E
Part Type:N-Channel FET
Power Dissipation (PD):
[Case temperature (Tc) = 25 ℃]520 W
Drain current (ID):
[Case temperature (Tc) = 25 ℃]80 A
Drain-source voltage (VDSS):600 V
Drain-source on resistance (RDS(on)):0.03 Ω
Package:TO-247AC

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