晶体管元件查询
型号:SST65R650S2
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】80 W
【管壳温度(Tc)=25 ℃】80 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】7.8 A
【管壳温度(Tc)=25 ℃】7.8 A
漏极和源极电压(VDSS):650 V
漏极和源极通态电阻(RDS(on)):0.67 Ω
封装:TO-252
更多N沟道场效应管BSN304A06N032SK2638NEZ1414-2ALSD60R380HTSSH7N90LSG65R650HT2SK1243FHP30N1F10AFSA12N60A2SK407RU70E15LIRFPE402SK3569SVG086R0ND