晶体管元件查询
型号:SVF11N60T
类型:N沟道场效应管
耗散功率(PD):205 W
漏极电流(ID):
【管壳温度(Tc)=25 ℃】11 A
【管壳温度(Tc)=25 ℃】11 A
漏极和源极电压(VDSS):600 V
漏极和源极通态电阻(RDS(on)):0.8 Ω
封装:TO-220
更多N沟道场效应管IRFJ141IRFR1112SK2889HYG013N03LS1C22SK3564HY5204A2SK3710SGW280N60W3S80N08R60N06SCT20N120SVF6N60FHYG055N08NS1B2SK2837IPP120N06S4-H1(4N06H1)