晶体管元件查询
型号:TK110Z65Z
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】190 W
【管壳温度(Tc)=25 ℃】190 W
漏极电流(ID):24 A
漏极和源极电压(VDSS):650 V
漏极和源极通态电阻(RDS(on)):0.11 Ω
封装:TO-247-4
更多N沟道场效应管IRFS820STP12NM50FP40N10FCP16N60BUZ90SPP02N80C3LND10N60BRFL11N70RF1S40N10SMIRF449IRFF130HY1808PIRFK2F054CSD18540Q5BSVD7N60