晶体管元件查询
型号:IPN70R900P7S(70S900)
类型:N沟道场效应管
耗散功率(PD):
【管壳温度(Tc)=25 ℃】6.5 W
【管壳温度(Tc)=25 ℃】6.5 W
漏极电流(ID):
【管壳温度(Tc)=20 ℃】6 A
【管壳温度(Tc)=20 ℃】6 A
漏极和源极电压(VDSS):700 V
漏极和源极通态电阻(RDS(on)):0.9 Ω
封装:SOT-223![](images/SOT-223gds.gif)
![](images/SOT-223gds.gif)
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